Key ^ | Value |
---|---|
Case | SO8 |
Drain current | 6.3/-7.8A |
Drain-source voltage | 20/-20V |
Features of semiconductor devices | ESD protected gate |
Gate-source voltage | ?10V |
Kind of channel | enhanced |
Kind of package | reel, |
Kind of transistor | complementary pair |
Manufacturer | DIODES INCORPORATED |
Mounting | SMD |
On-state resistance | 0.02/0.033? |
Polarisation | unipolar |
Power dissipation | 1.8W |
Type of transistor | N/P-MOSFET |