prev
Diodes Incorporated DMG6602SVTQ-7-52
manufacturer:
Description:
Mosfet Array 30V 3.4A (Ta), 2.8A (Ta) 840mW (Ta) Surface Mount TSOT-26

Attributes

Key ^Value
Base Product NumberDMG6602
CategoryDiscrete Semiconductor Products
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25?C3.4A (Ta), 2.8A (Ta)
Drain to Source Voltage (Vdss)30V
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V, 420pF @ 15V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power - Max840mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTSOT-26
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250?A