Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.741 pF @ 15 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.5W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs18.5mOhm @ 9A, 10V
Series-
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.1V @ 250?A
prev