Attributes

Key Value
Base Product NumberDMN3110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.2A (Ta)
Drain to Source Voltage.30V
Drive Voltage (Max Rds .1.8V, 8V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .1.52nC @ 4.5V
Input Capacitance (Ciss.150pF @ 15V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-XFDFN
Part StatusActive
Power Dissipation (Max)1.38W
Rds On (Max) @ Id, Vgs69mOhm @ 500mA, 8V
Series-
Supplier Device PackageX2-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12V
Vgs(th) (Max) @ Id1.1V @ 250?A
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