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Description:
DIODES INCORPORATED DMN3190LDW-13 | Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 400mW; SOT36
Attributes
| Key ^ | Value |
|---|---|
| Case | SOT363 |
| Drain current | 1A |
| Drain-source voltage | 30V |
| Gate charge | 2nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| On-state resistance | 335m? |
| Polarisation | unipolar |
| Power dissipation | 400mW |
| Pulsed drain current | 9.6A |
| Type of transistor | N-MOSFET |