Attributes

Key Value
Base Product NumberDMN65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.310mA (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.87 nC @ 10 V
Input Capacitance (Ciss.22 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)370mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs3Ohm @ 115mA, 10V
Series-
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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