Attributes

Key Value
Base Product NumberDMT10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.7A (Ta), 113A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56.4 nC @ 10 V
Input Capacitance (Ciss.4468 pF @ 50 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Part StatusActive
Power Dissipation (Max)1.2W (Ta)
Rds On (Max) @ Id, Vgs8.8mOhm @ 13A, 10V
Series-
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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