Attributes

Key Value
Base Product NumberDMT10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.41.2A (Tc)
DescriptionMOSFET N-CH 100V 41.2A .
Detailed DescriptionN-Channel 100 V 41.2A (.
Digi-Key Part NumberDMT10H025SK3-13-ND - Ta.
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .21.4 nC @ 10 V
Input Capacitance (Ciss.1544 pF @ 50 V
ManufacturerDiodes Incorporated
Manufacturer Product Nu.DMT10H025SK3-13
Manufacturer Standard L.20 Weeks
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)1.4W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-252, (D-Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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