Attributes

Key Value
Base Product NumberDMTH8012
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta), 72A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .34 nC @ 10 V
Input Capacitance (Ciss.1949 pF @ 40 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Part StatusActive
Power Dissipation (Max)2.6W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 12A, 10V
Series-
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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