Attributes

Key Value
Base Product NumberZVN2110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.320mA (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.75 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageCut Tape (CT)
Package / CaseE-Line-3
Part StatusActive
Power Dissipation (Max)700mW (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Series-
Supplier Device PackageE-Line (TO-92 compatibl.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 1mA
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