Attributes

Key Value
@Ic (A)30m
@VCE (test) (V)10
C(ob) (F)3p
CaseTO5
Collector Capacitance (.3 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.50
hfe50
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerDiscrete Semiconductor .
Max. Operating Junction.175 ?C
Max. PD (W)800m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .135 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU136256
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.100M
Transition Frequency (f.50M MHz
TypeTransistor Silicon NPN
Vbr CBO135
Vbr CEO135
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