Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO202
Collector Capacitance (.3 pF
Forward Current Transfe.40
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)0.2u
ManufacturerDiscrete Semiconductor .
Max. hFE180
Max. Operating Junction.150 ?C
Max. PD (W)2.0
Maximum Collector Curre.0.5 A
Maximum Collector Power.2 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.250 V
Maximum Emitter-Base Vo.6 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
SKU84827
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200M
Transition Frequency (f.45 MHz
TypeTransistor Silicon NPN
Vbr CBO250
Vbr CEO250
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