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Diverse 2SC1008A
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manufacturer:
Description:
2SC1008A SemiConductor - CASE: Standard MAKE: Diverse

Attributes

Key Value
@Ic (A)50m
@VCE (test) (V)2.0
C(ob) (F)15p
CaseTO18
Collector Capacitance (Cc)30 pF
Derate (Amb) (W/?C)6.4m
Forward Current Transfer Ratio (hFE), MIN140
hfe140
Ic Max. (A)700m
Icbo Max. @Vcb Max. (A)100n
ManufacturerDiverse
Max. Operating Junction Temperature (Tj)150 ?C
Max. PD (W)800m
Maximum Collector Current |Ic max|0.7 A
Maximum Collector Power Dissipation (Pc)0.8 W
Maximum Collector-Base Voltage |Vcb|100 V
Maximum Collector-Emitter Voltage |Vce|80 V
Maximum Emitter-Base Voltage |Veb|8 V
Oper. Temp (?C) Max.150
Pinout Equivalence Number3-12
PolarityNPN
SKU766587
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.70M
Transition Frequency (ft):35 MHz
TypeTransistor Silicon NPN
Vbr CBO100
Vbr CEO80