Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200mA (Ta)
Drain to Source Voltage.50 V
Drive Voltage (Max Rds .2.75V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .2.4 nC @ 10 V
Input Capacitance (Ciss.50 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)350mW (Ta)
Rds On (Max) @ Id, Vgs3.5Ohm @ 200mA, 5V
Series-
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.5V @ 1mA
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