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Fairchild Semiconductor FCH110N65F-F155
Description:
N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C35A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4895 pF @ 100 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case, Supplier Device PackageTO-247-3
Power Dissipation (Max)357W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs110mOhm @ 17.5A, 10V
SeriesFRFET?, SuperFET? II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 3.5mA