Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12.5A (Tc)
DescriptionPOWER FIELD-EFFECT TRAN.
Detailed DescriptionN-Channel 500 V 12.5A (.
Digi-Key Part Number2156-FQP13N50-ND
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 10 V
Input Capacitance (Ciss.2300 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.FQP13N50
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)170W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs430mOhm @ 6.25A, 10V
SeriesQFET?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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