Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.29A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28 nC @ 10 V
Input Capacitance (Ciss.900 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)75W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs35mOhm @ 29A, 10V
SeriesUltraFET?
Supplier Device PackageD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id3V @ 250?A
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