Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.5A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.7V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 4.5 V
Input Capacitance (Ciss.2150 pF @ 10 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusActive
Power Dissipation (Max)1W (Ta)
Rds On (Max) @ Id, Vgs13.5mOhm @ 10.5A, 4.5V
Series-
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.5V @ 250?A
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