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General Electric 2N266
mpn:
manufacturer:
MPN:
Description:
2N266 SemiConductor - CASE: Standard MAKE: General Electric

Attributes

Key ^Value
C(ob) (F)35p
CaseR32
Collector Capacitance (Cc)35 pF
Derate (Amb) (W/?C)1.3m
Forward Current Transfer Ratio (hFE), MIN25
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)16u
ManufacturerGeneral Electric
Max. Operating Junction Temperature (Tj)75 ?C
Max. PD (W)75m
Maximum Collector Current |Ic max|0.2 A
Maximum Collector Power Dissipation (Pc)0.075 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|18 V
Maximum Emitter-Base Voltage |Veb|6 V
Oper. Temp (?C) Max.60
Pinout Equivalence NumberN/A
PolarityPNP
SKU775740
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.800k
Transition Frequency (ft):0.4 MHz
TypeTransistor Germanium PNP
Vbr CBO, Vbr CEO18