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General Electric 2N30
mpn:
manufacturer:
MPN:
Description:
2N30 SemiConductor - CASE: Standard MAKE: General Electric

Attributes

Key Value
@Ic (A).50m
@VCE (test) (V)25
CaseTO7
Collector Capacitance (Cc)20 pF
Forward Current Transfer Ratio (hFE), MIN22
hfe17
Ic Max. (A)7.0m
ManufacturerGeneral Electric
Max. Operating Junction Temperature (Tj)100 ?C
Max. PD (W)100m
Maximum Collector Current |Ic max|0.007 A
Maximum Collector Power Dissipation (Pc)0.1 W
Maximum Collector-Base Voltage |Vcb|30 V
Maximum Collector-Emitter Voltage |Vce|30 V
Oper. Temp (?C) Max.60
Pinout Equivalence NumberN/A
PolarityPNP
SKU775279
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.2.0M
Transition Frequency (ft):2 MHz
TypeTransistor Germanium PNP
Vbr CBO30