@Ic (test) (A) | 5.0 |
@VCE (V) | 2.0 |
Case | TO36 |
Derate Above 25?C | 1.0 |
Forward Current Transfer Ratio (hFE), MIN, Min hFE | 35 |
Ic Max. (A) | 15 |
Icbo Max. @Vcb Max. (A) | 8.0m |
Manufacturer | Generic |
Max. hFE | 70 |
Max. Operating Junction Temperature (Tj) | 95 ?C |
Maximum Collector Current |Ic max| | 15 A |
Maximum Collector Power Dissipation (Pc) | 170 W |
Maximum Collector-Base Voltage |Vcb| | 40 V |
Maximum Collector-Emitter Voltage |Vce| | 25 V |
Maximum Emitter-Base Voltage |Veb| | 20 V |
Oper. Temp (?C) Max. | 95 |
Pinout Equivalence Number | 3-14 |
Polarity | PNP |
SKU | 82090 |
Surface Mounted Yes/No | NO |
t(f) Max. (S), Tr Max. (s) | 15u- |
Trans. Freq (Hz) Min. | 10k |
Transition Frequency (ft): | 0.2 MHz |
Type | Transistor Germanium PNP |
Vbr CBO, Vbr CEO | 40 |