Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)2.0
CaseTO3
Collector Capacitance (.10 pF
Derate Above 25?C854m
Forward Current Transfe.50
Ic Max. (A)10
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerGeneric
Max. hFE150
Max. Operating Junction.200 ?C
Max. PD (W)150
Maximum Collector Curre.10 A
Maximum Collector Power.150 W
Maximum Collector-Base .100 V
Maximum Collector-Emitt.80 V
Maximum Emitter-Base Vo.7 V
Min hFE50
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-14
PolarityNPN
SKU774466
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.30k
Transition Frequency (f.4 MHz
TypeTransistor Silicon NPN
Vbr CBO100
Vbr CEO80
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