Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)3.0
CaseSOT33
Derate (Amb) (W/?C)6.0m
Forward Current Transfe.40
hfe60
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)500n
ManufacturerHitachi
Max. Operating Junction.150 ?C
Max. PD (W)600m
Maximum Collector Curre.0.5 A
Maximum Collector Power.0.6 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.50 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.3-10
PolarityNPN
SKU766451
Surface Mounted Yes/NoNO
Transition Frequency (f.100 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO50
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