| @Ic (A) | 2.0m |
| @VCE (test) (V) | 12 |
| C(ob) (F) | 3.5p |
| Case | TO236 |
| Collector Capacitance (Cc) | 3.5 pF |
| Derate (Amb) (W/?C) | 1.5m |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| hfe | 120= |
| Ic Max. (A) | 100m |
| Icbo Max. @Vcb Max. (A) | 500n |
| Manufacturer | Hitachi |
| Max. Operating Junction Temperature (Tj) | 125 ?C |
| Max. PD (W) | 150m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.15 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | 3-12 |
| Polarity | NPN |
| SKU | 765573 |
| Surface Mounted Yes/No | YES |
| Trans. Freq (Hz) Min. | 230M |
| Transition Frequency (ft): | 115 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO, Vbr CEO | 30 |