| Case | TO3 |
| Derate Above 25?C | 400m |
| Forward Current Transfer Ratio (hFE), MIN, Max. PD (W) | 10 |
| Ic Max. (A) | 2.5 |
| Icbo Max. @Vcb Max. (A) | 1.0m |
| Manufacturer | Generic |
| Max. Operating Junction Temperature (Tj) | 115 ?C |
| Maximum Collector Current |Ic max| | 2.5 A |
| Maximum Collector Power Dissipation (Pc) | 10 W |
| Maximum Collector-Base Voltage |Vcb| | 850 V |
| Maximum Collector-Emitter Voltage |Vce| | 500 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| R(sat) (?) | 2.0 |
| SKU | 610633 |
| Surface Mounted Yes/No | NO |
| Tr Max. (s) | 510n+ |
| Trans. Freq (Hz) Min. | 7.5M |
| Transition Frequency (ft): | 3 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO, Vbr CEO | 850 |