@Ic (test) (A) | 4.0 |
@VCE (V), Ic Max. (A) | 5.0 |
Case | TO3 |
Collector Capacitance (Cc) | 125 pF |
Forward Current Transfer Ratio (hFE), MIN | 3 |
Icbo Max. @Vcb Max. (A) | 1.0m |
Manufacturer | Generic |
Max. Operating Junction Temperature (Tj) | 115 ?C |
Max. PD (W) | 80 |
Maximum Collector Current |Ic max| | 5 A |
Maximum Collector Power Dissipation (Pc) | 12.5 W |
Maximum Collector-Base Voltage |Vcb| | 1500 V |
Maximum Collector-Emitter Voltage |Vce| | 700 V |
Maximum Emitter-Base Voltage |Veb| | 5 V |
Min hFE | 2.5 |
Oper. Temp (?C) Max. | 125 |
Pinout Equivalence Number | 3-14 |
Polarity | NPN |
SKU | 366423 |
Surface Mounted Yes/No | NO |
t(f) Max. (S) | 700n |
Trans. Freq (Hz) Min. | 7.0M |
Transition Frequency (ft): | 4 MHz |
Type | Transistor Silicon NPN |
Vbr CEO | 700 |