Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)2.0
CaseTO202
Collector Capacitance (.12 pF
Derate Above 25?C50m
Forward Current Transfe.120
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)100n
ManufacturerGeneric
Max. hFE360
Max. Operating Junction.150 ?C
Max. PD (W)6.2
Maximum Collector Curre.2 A
Maximum Collector Power.6.5 W
Maximum Collector-Base .75 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.5 V
Min hFE120
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.4-33
PolarityNPN
R(sat) (?)2.0
SKU413065
Surface Mounted Yes/NoNO
t(f) Max. (S)50n-
Tr Max. (s)25n-
Trans. Freq (Hz) Min.200M
Transition Frequency (f.200 MHz
TypeTransistor Silicon NPN
Vbr CEO75
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