Attributes

Key Value
@Ic (A)4.0m
@VCE (test) (V)10
C(ob) (F)2.0
CaseX55-1
Collector Capacitance (.1.6 pF
Derate (Amb) (W/?C)2.0m
Forward Current Transfe.20
hfe20
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerPhilips
Max. Operating Junction.125 ?C
Max. PD (W)250m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.25 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.12 V
Maximum Emitter-Base Vo.2 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
SKU1279766
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.600M
Transition Frequency (f.500 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO12
prev