@Ic (test) (A) | 500m |
@VCE (V) | 5.0 |
Case | TO220 |
Derate Above 25?C | 240m |
Forward Current Transfer Ratio (hFE), MIN, Min hFE, Vbr CBO, Vbr CEO | 60 |
Ic Max. (A) | 3.0 |
Icbo Max. @Vcb Max. (A) | 100u |
Manufacturer | Generic |
Max. hFE | 300 |
Max. Operating Junction Temperature (Tj) | 140 ?C |
Max. PD (W) | 30 |
Maximum Collector Current |Ic max| | 3 A |
Maximum Collector Power Dissipation (Pc) | 30 W |
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 60 V |
Oper. Temp (?C) Max. | 140 |
Pinout Equivalence Number | 3-15 |
Polarity | NPN |
Surface Mounted Yes/No | NO |
Trans. Freq (Hz) Min. | 3.0M |
Transition Frequency (ft): | 3 MHz |
Type | Transistor Silicon NPN |