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Generic GS2014
mpn:
brand:
manufacturer:
MPN:
Description:
GS2014 Semiconductor - CASE: Standard MAKE: Generic

Attributes

Key ^Value
@Ic (test) (A), Trans. Freq (Hz) Min.50m
@VCE (V)10
CaseTO202
Derate Above 25?C96m
Forward Current Transfer Ratio (hFE), MIN, Min hFE100
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)100n
ManufacturerGST
Max. hFE320
Max. Operating Junction Temperature (Tj)140 ?C
Max. PD (W)12
Maximum Collector Current |Ic max|0.2 A
Maximum Collector Power Dissipation (Pc)12 W
Maximum Collector-Base Voltage |Vcb|200 V
Maximum Collector-Emitter Voltage |Vce|180 V
Oper. Temp (?C) Max.140
Pinout Equivalence Number3-10
PolarityNPN
SKU1269544
Surface Mounted Yes/NoNO
Transition Frequency (ft):50 MHz
TypeTransistor Silicon NPN
Vbr CBO200
Vbr CEO180