prev
Generic GS2017
mpn:
brand:
manufacturer:
MPN:
Description:
GS2017 Semiconductor - CASE: Standard MAKE: Generic

Attributes

Key ^Value
@Ic (test) (A)50m
@VCE (V)10
CaseTO220
Derate Above 25?C200m
Forward Current Transfer Ratio (hFE), MIN, Min hFE40
Ic Max. (A)150m
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerGST
Max. hFE170
Max. Operating Junction Temperature (Tj)140 ?C
Max. PD (W)25
Maximum Collector Current |Ic max|0.15 A
Maximum Collector Power Dissipation (Pc)25 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|300 V
Oper. Temp (?C) Max.140
Pinout Equivalence Number3-15
PolarityNPN
SKU1269532
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.40M
Transition Frequency (ft):40 MHz
TypeTransistor Silicon NPN
Vbr CBO, Vbr CEO300