Attributes

Key Value
@Ic (A)5.0m
@VCE (test) (V)10
C(ob) (F)400f
CaseTO92
Collector Capacitance (.0.4 pF
Derate (Amb) (W/?C)5.0m
Forward Current Transfe.30
hfe30
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)200n
ManufacturerGeneric
Max. Operating Junction.150 ?C
Max. PD (W)425m
Maximum Collector Curre.0.02 A
Maximum Collector Power.1 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.N/A
PolarityNPN
SKU1281013
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.500M
Transition Frequency (f.500M MHz
TypeTransistor Silicon NPN
Vbr CBO35
Vbr CEO30
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