Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc) (158?C)
DescriptionTRANS SJT 650V 8A TO276
Detailed Description650 V 8A (Tc) (158?C) 2.
Digi-Key Part Number1242-1149-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .-
FET Feature-
FET Type-
Input Capacitance (Ciss.720 pF @ 35 V
ManufacturerGeneSiC Semiconductor
Manufacturer Product Nu.2N7638-GA
MfrGeneSiC Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 225?C (TJ)
PackageBulk
Package / CaseTO-276AA
Power Dissipation (Max)200W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs170mOhm @ 8A
Series-
Supplier Device PackageTO-276
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)-
Vgs(th) (Max) @ Id-
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