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GeneSiC Semiconductor 2N7639-GA
GeneSiC Semiconductorzoom
Description:
650 V 15A (Tc) (155?C) 172W (Tc) Through Hole TO-257

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C15A (Tc) (155?C)
DescriptionTRANS SJT 650V 15A TO257
Detailed Description650 V 15A (Tc) (155?C) 172W (Tc) Through Hole TO-257
Digi-Key Part Number1242-1150-ND
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On), FET Feature, FET Type, Series, Vgs (Max), Vgs(th) (Max) @ Id-
Input Capacitance (Ciss) (Max) @ Vds1534 pF @ 35 V
Manufacturer Product Number2N7639-GA
Manufacturer, MfrGeneSiC Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 225?C (TJ)
PackageBulk
Package / CaseTO-257-3
Power Dissipation (Max)172W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs105mOhm @ 15A
Supplier Device PackageTO-257
TechnologySiC (Silicon Carbide Junction Transistor)