GeneSiC Semiconductor GA20JT12-263

mpnGA20JT12-263
brandname: GeneSiC Semiconductor
manufacturername: GeneSiC Semiconductor

Attributes

Key	Value
Base Product Number	GA20JT12
Category	Discrete Semiconductor .
Current - Continuous Dr.	45A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	-
FET Feature	-
FET Type	-
Input Capacitance (Ciss.	3091 pF @ 800 V
Mfr	GeneSiC Semiconductor
Mounting Type	Surface Mount
Operating Temperature	175?C (TJ)
Package	Tube
Package / Case	TO-263-8, D?Pak (7 Lead.
Part Status	Active
Power Dissipation (Max)	282W (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 20A
Series	-
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Ju.
Vgs (Max)	-
Vgs(th) (Max) @ Id	-