| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
| Diode Configuration | 1 Pair Common Anode |
| Mfr | GeneSiC Semiconductor |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55?C ~ 150?C |
| Package | Bulk |
| Package / Case, Supplier Device Package | Twin Tower |
| Product Status | Obsolete |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 250 A |