| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 32A (DC) |
| Current - Reverse Leakage @ Vr | 50 ?A @ 650 V |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Global Power Technology-GPT |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55?C ~ 175?C |
| Package | Cut Tape (CT) |
| Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Supplier Device Package | TO-263 |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |