Goford Semiconductor GT040N04D5I

mpnGT040N04D5I
brandname: Goford Semiconductor
manufacturername: Goford Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	110A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	50 nC @ 10 V
Input Capacitance (Ciss.	2298 pF @ 20 V
Mfr	Goford Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Power Dissipation (Max)	160W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	3.5mOhm @ 10A, 10V
Series	-
Supplier Device Package	8-DFN (4.9x5.75)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A