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Harris Corporation 2N6773DR6220
manufacturer:
Description:
Bipolar (BJT) Transistor NPN 650 V 1 A 50MHz 40 W Through Hole TO-220

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100?A
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 300mA, 3V
Frequency - Transition50MHz
MfrHarris Corporation
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power - Max40 W
Product StatusActive
Series-
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)650 V