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Harris Corporation IRF820
mpn:
manufacturer:
MPN:
Description:
N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB

Attributes

Key Value
Base Product NumberIRF8
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C4A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 25 V
MfrHarris Corporation
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)80W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
SeriesPowerMESH? II
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A