prev
Harris Corporation IRF831
mpn:
manufacturer:
MPN:

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C4.5A (Tc)
Drain to Source Voltage (Vdss)450 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V
MfrHarris Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)75W (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A