| @Ic (test) (A) | 5.0 |
| @VCE (V) | 4.0 |
| Case | TO66 |
| Derate Above 25?C | 200m |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE | 30 |
| Ic Max. (A) | 7.0 |
| Icbo Max. @Vcb Max. (A) | 200u |
| Manufacturer | Hitachi |
| Max. hFE, Oper. Temp (?C) Max. | 140 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 25 |
| Maximum Collector Current |Ic max| | 7 A |
| Maximum Collector Power Dissipation (Pc) | 25 W |
| Maximum Collector-Base Voltage |Vcb| | 130 V |
| Maximum Collector-Emitter Voltage |Vce| | 80 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| R(sat) (?) | 333m |
| SKU | 543383 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 4.0u-+ |
| Tr Max. (s) | 400n- |
| Transition Frequency (ft): | 12 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 130 |
| Vbr CEO | 80 |