| @Ic (test) (A) | 500m |
| @VCE (V) | 2.0 |
| Case | SOT32 |
| Derate Above 25?C | 6.0m |
| Forward Current Transfer Ratio (hFE), MIN | 16 |
| Ic Max. (A) | 2.5 |
| Icbo Max. @Vcb Max. (A) | 20u |
| Manufacturer | Hitachi |
| Max. hFE | 320 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 10 |
| Maximum Collector Current |Ic max| | 2.5 A |
| Maximum Collector Power Dissipation (Pc) | 10 W |
| Maximum Collector-Base Voltage |Vcb| | 35 V |
| Maximum Collector-Emitter Voltage |Vce| | 35 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Min hFE | 160 |
| Oper. Temp (?C) Max. | 150 |
| Pinout Equivalence Number | 3-10 |
| Polarity | NPN |
| SKU | 543387 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 180M |
| Transition Frequency (ft): | 180 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 35 |
| Vbr CEO | 35 |