| @Ic (A) | 60m |
| @VCE (test) (V), Ic Max. (A) | 1.0 |
| Case | TO39 |
| Collector Capacitance (Cc) | 14 pF |
| Derate (Amb) (W/?C) | 5.3m |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| hfe | 30 |
| Icbo Max. @Vcb Max. (A) | 100u |
| Manufacturer | Hitachi |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 800m |
| Maximum Collector Current |Ic max| | 1 A |
| Maximum Collector Power Dissipation (Pc) | 0.8 W |
| Maximum Collector-Base Voltage |Vcb| | 70 V |
| Maximum Collector-Emitter Voltage |Vce| | 52 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 3-12 |
| Polarity | NPN |
| SKU | 766349 |
| Surface Mounted Yes/No | NO |
| Transition Frequency (ft): | 400 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 70 |
| Vbr CEO | 52 |