Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)6.0
C(ob) (F)10p
CaseSOT33
Collector Capacitance (.10 pF
Forward Current Transfe.30
hfe30
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerHitachi
Max. Operating Junction.150 ?C
Max. PD (W)200m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.2 W
Maximum Collector-Base .200 V
Maximum Collector-Emitt.150 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU343795
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.60M
Transition Frequency (f.60 MHz
TypeTransistor Silicon NPN
Vbr CBO200
Vbr CEO150
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