@Ic (test) (A), @VCE (test), Ic Max. (A) | 2.0 |
Case | TO39 |
Derate Above 25?C | 53m |
Forward Current Transfer Ratio (hFE), MIN | 1000 |
Icbo Max. @Vcb Max. (A) | 100u |
Manufacturer | Hitachi |
Mat. | Silicon Logic |
Max. Operating Junction Temperature (Tj) | 150 ?C |
Max. PD (W) | 8.0 |
Maximum Collector Current |Ic max| | 2 A |
Maximum Collector Power Dissipation (Pc) | 8 W |
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 120 V |
Maximum Emitter-Base Voltage |Veb| | 7 V |
Min hFE | 1.0k |
Oper. Temp (?C) Max. | 175 |
Pinout Equivalence Number | 3-36 |
Polarity | NPN |
R(sat) (?) | 750m |
SKU | 590856 |
Surface Mounted Yes/No | NO |
t(f) Max. (S) | 4.2u-+ |
Tr Max. (s) | 500n- |
Type | Transistor Silicon NPN |
Vbr CEO | 120 |