Attributes

Key Value
@Ic (test) (A)2.0
@VCE (test)2.0
CaseSOT78
Derate Above 25?C120m
Forward Current Transfe.1000
Ic Max. (A)2.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerHitachi
Mat.Silicon Logic
Max. Operating Junction.150 ?C
Max. PD (W)15
Maximum Collector Curre.2 A
Maximum Collector Power.15 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.120 V
Maximum Emitter-Base Vo.7 V
Min hFE1.0k
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-37
PolarityNPN
R(sat) (?)750m
SKU590857
Surface Mounted Yes/NoNO
t(f) Max. (S)4.2u-+
Tr Max. (s)500n-
TypeTransistor Silicon NPN
Vbr CEO120
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