Attributes

Key Value
@Ic (test) (A)1.0
@VCE (test)2.0
CaseTO33
Collector Capacitance (.29 pF
Derate Above 25?C53m
Forward Current Transfe.5000
Ic Max. (A)5.0
Icbo Max. @Vcb Max. (A)1.0u+
ManufacturerHitachi
Mat.Silicon Logic
Max. hFE20k
Max. Operating Junction.150 ?C
Max. PD (W)8.0
Maximum Collector Curre.5 A
Maximum Collector Power.8 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.120 V
Maximum Emitter-Base Vo.12 V
Min hFE1.0k
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.4-102
PolarityNPN
R(sat) (?)500m
SKU590858
Surface Mounted Yes/NoNO
t(f) Max. (S)500n-
t(stor) Max. (S)1.0u
Tr Max. (s)300n-
Trans. Freq (Hz) Min.50M
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CEO120
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