Attributes

Key Value
@Ic (A)2.0m
@VCE (test) (V)12
CaseTO92
Collector Capacitance (.3.2 pF
Forward Current Transfe.160
hfe250
Ic Max. (A)50m
ManufacturerHitachi
Max. Operating Junction.150 ?C
Max. PD (W)300m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.120 V
Maximum Emitter-Base Vo.5 V
Pinout Equivalence Numb.N/A
PolarityNPN
SKU343846
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200M
Transition Frequency (f.100 MHz
TypeTransistor Silicon NPN
Vbr CEO120
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