Infineon BSC12DN20NS3GATMA1

B0748MQS8H

INFINEON BSC12DN20NS3GATMA1 Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8 - 5000 item(s)

INFINEON BSC12DN20NS3GATMA1 Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8 - 5000 item(s)zoom

Attributes

Key Value
Base Product NumberBSC12DN20
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.3A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .8.7 nC @ 10 V
Input Capacitance (Ciss.680 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)50W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs125mOhm @ 5.7A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 25?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics60728970.612500025Infineon0.612 @ 5000
thumbzoomNewark50Y18130.74712563INFINEON0.747 @ 25
Mouser726-BSC12DN20NS3G1.2118562Infineon1.21 @ 25
ArrowBSC12DN20NS3GATMA11.30912492Infineon1.309 @ 25
Digi-Key25278211.594125Infineon Technologies1.594 @ 25
RS Delivers170-22901.7232125Infineon1.7232 @ 25
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